High-quality GaN free-standing substrates with low dislocation density suitable for manufacturing laser diodes to be used as light sources for Blu-ray disc drives or projectors.

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Product Information

Generic name

Compound Semiconductor substrate (wafer), GaN (Gallium nitride)

CAS no.

25617-97-4

Application

• S0000
• T0000
• T0400
• U0000
• U0100
• U0200

Department

SCIOCS Division

Contact

2-7-1, Nihonbashi, Chuo-ku, Tokyo 103-6020, Japan
TEL: +81-3-5201-0323
FAX: +81-3-5201-0483
Website of SCIOCS Division