Insulator Materials for
Electronic Device Applications

Insulator materials from Sumitomo Chemical can be printed over large-areas, yielding layers with highly insulating properties and with strong adhesion to substrate and electrode materials.

Features of Materials

device structure of organic tansistor with a overcoat layer Example application: passivation layer applied to bottom gate device architecture

device structure of organic tansistor without a overcoat layer Example application: insulator for bottom gate transistor devices

Technical specifications
  ORG series (thermo set type) PGI series (photo-sensitive type)
Coating process Spin coating from solution Spin coating from solution
Processing condition Curing process: 150-220°C for 30 min-1 hr in nitrogen I-line (365nm): 600°C 1200mJ/cm2
Curing process: 150-220°C for 30 min-1 hr in nitrogen
Film roughness Ra < 1nm Rmax < 5nm Ra < 1nm Rmax < 5nm
Leakage 1x10-8A/m2 @ 4.8KV/㎝ (t=544nm) 1x10-8A/m2 @ 2.7KV/㎝ (t=400nm)
Dielectric constant Variable from 2.6 - 3.8 Variable from 2.8 - 3.8
Chemical durability Durability to metal etchants (acids),
organic solvents (PGMEA, 2-heptanone)
Cured films show durability to metal etchant (acidic),
organic solvents (PGMEA, 2-heptanone).
< 1% thickness loss when immersed for 2 min
Thermal stability > 230°C > 230°C
Contact angle Variable from 47 - 95° Variable from 47 - 95°

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