Insulator Materials for Electronic Device Applications

Insulator materials from Sumitomo Chemical can be printed over large-areas, yielding layers with highly insulating properties and with strong adhesion to substrate and electrode materials.

Features of Materials

  • Insulator material used in organic devices such as organic thin film transistors
  • Applied using solution processing
  • Patternable using photo patterning processes (I-line)
  • High thermal stability
  • Used as passivation layer for interlayer applications or as insulators
  • Example application: passivation layer applied to bottom gate device architecture

  • Example application: insulator for bottom gate transistor devices

Technical specifications
 ORG series (thermo set type)PGI series (photo-sensitive type)
Coating process Spin coating from solution Spin coating from solution
Processing condition Curing process: 150-220°C for 30 min-1 hr in nitrogen I-line (365nm) : 600°C 1200mJ/cm2
Curing process: 150-220°C for 30 min-1 hr in nitrogen
Film roughness Ra < 1nm Rmax < 5nm Ra < 1nm Rmax < 5nm
Leakage 1x10-8A/m2 @ 4.8KV/cm (t=544nm) 1x10-8A/m2 @ 2.7KV/cm (t=400nm)
Dielectric constant Variable from 2.6 - 3.8 Variable from 2.8 - 3.8
Chemical durability Durability to metal etchants (acids),
organic solvents (PGMEA, 2-heptanone)
Cured films show durability to metal etchant (acidic),
organic solvents (PGMEA, 2-heptanone).
< 1% thickness loss when immersed for 2 min
Thermal stability > 230°C > 230°C
Contact angle Variable from 47 - 95° Variable from 47 - 95°


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