Organic Semiconductors

Organic semiconductors from Sumitomo Chemical can be supplied as an ink in eco-friendly non-halogenated solvent.
Organic semiconductor films can be formed on plastic substrates by printing processes at low temperature and in air. Light-weight and flexible electric devices can be realized.


Organic semiconductors enable many printed electronics applications to be envisaged such as sensors, circuits, displays and wearable devices.

  • Sensors: transducer elements for bio-sensors in medical applications.
  • Circuits: logic gates, amplifiers and circuitry for sensor applications.
  • Displays: select and drive pixel transistors.
  • Development of OTFTs into applications such as logic
  • Low voltage inverter produced with Vdd/Vss set at +6V/-6V respectively with examples of corresponding V in / V out waveforms
  • Hand-held Medical Devices

  • Wearable Devices

  • Low voltage inverter operation

Features of materials and process

  • Low temperature processing compatible (<120°C).
    Suitable for devices on plastic substrates such as PEN or PET and processing at 100°C
  • Annealing processes are not required for high mobility devices:
    the crystalline nature of semiconductors is exhibited at room temperature
  • Soluble in typical organic solvents such as xylene for solution processing
  • Example CDT test cell device on plastic (to source/drain level).
    Lithographically defined electrodes to 5μm channel length resolution

Transistor performance

  • Mobility of > 0.5cm2/Vs for channel lengths with < 10μm and On/off current ratios > 105 on plastic substrates
  • High uniformity in device mobility with < 10% variation in mobility
  • Contacts such as gold or silver possible
  • High gate bias stress stability → Latest OSC material designed with this consideration demonstrates excellent bias stress stability
Top gate OSC material performance
Average saturation mobility (cm2/Vs) at [channel length] 1.0 - 4.0
On/off current ratio 105
Phase property Semi-crystalline
Sub-threshold slope (V/decade) 0.9(L=10μm)

Low voltage device example: Implementation of our OSC for 10V operation

  • Average saturation mobility as a function of channel length with error bars indicating ± 1 sigma in mobility
  • Example transfer characteristic at 10V operation with no hysteresis and sub-threshold slope of 0.9V/decade
  • Threshold voltage of transistors as a function of stress time showing good device stability. Devices were subject to a constant gate bias of -10V for 48hours


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