- Examples of applications
- Organic Semiconductors
Organic semiconductors from Sumitomo Chemical can be supplied as an ink in eco-friendly non-halogenated solvent.
Organic semiconductor films can be formed on plastic substrates by printing processes at low temperature and in air. Light-weight and flexible electric devices can be realized.
Organic semiconductors enable many printed electronics applications to be envisaged such as sensors, circuits, displays and wearable devices.
- Sensors: transducer elements for bio-sensors in medical applications.
- Circuits: logic gates, amplifiers and circuitry for sensor applications.
- Displays: select and drive pixel transistors.
- Development of OTFTs into applications such as logic
- Low voltage inverter produced with Vdd/Vss set at +6V/-6V respectively with examples of corresponding V in / V out waveforms
Hand-held Medical Devices
Low voltage inverter operation
Features of materials and process
- Low temperature processing compatible (<120°C).
Suitable for devices on plastic substrates such as PEN or PET and processing at 100°C
- Annealing processes are not required for high mobility devices:
the crystalline nature of semiconductors is exhibited at room temperature
- Soluble in typical organic solvents such as xylene for solution processing
Example CDT test cell device on plastic (to source/drain level).
Lithographically defined electrodes to 5μm channel length resolution
- Mobility of > 0.5cm2/Vs for channel lengths with < 10μm and On/off current ratios > 105 on plastic substrates
- High uniformity in device mobility with < 10% variation in mobility
- Contacts such as gold or silver possible
- High gate bias stress stability → Latest OSC material designed with this consideration demonstrates excellent bias stress stability
|Top gate OSC material performance|
|Average saturation mobility (cm2/Vs) at [channel length]||1.0 - 4.0
|On/off current ratio||105|
|Sub-threshold slope (V/decade)||0.9(L=10μm)|
Low voltage device example: Implementation of our OSC for 10V operation
- Average saturation mobility as a function of channel length with error bars indicating ± 1 sigma in mobility
- Example transfer characteristic at 10V operation with no hysteresis and sub-threshold slope of 0.9V/decade
- Threshold voltage of transistors as a function of stress time showing good device stability. Devices were subject to a constant gate bias of -10V for 48hours