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We specialize in providing the highest quality GaN and GaAs compound semiconductor substrates and epitaxial*1 wafers for various applications including microwave and optical devices.

For microwave devices, our GaAs and GaN epitaxial wafers enable the most advanced RF (radio-frequency) power amplifiers and switches, used in cell phones, base stations, radars, and wireless LANs. We also have rolled out GaN substrates for next generation high power devices, and currently are working on both diameter upsizing and quality improvement.

For optical devices, our GaN substrates and GaAs epitaxial wafers are used in Laser Diodes (LD) for Blu-ray*2/DVD/CD drives and high-end projectors. Our materials are also used to make LEDs for general lighting and LCD backlight applications.

To realize a society using materials of low enviroment load, we are also developing lead-free piezoelectric thin films and boron-doped diamond (BDD) electrodes.
(K, Na) NbO₃ (KNN) thin film : lead-free piezoelectric crystal thin fiim
Boron Doped Diamond (BDD) electronodes : electrode for electrochemistry applications

  • *1A method of depositing and growing a single crystal thin film with the same crystal orientation on a single crystal substrate by a vapor phase growth method
  • *2Blu-ray is a registered trademark of the Blu-ray Disc Association
  Ⅲ-Ⅴ Compound Semiconductors Functional Thin Films
Devices GaN Single
Crystal Wafers
HVPE-
GaN/AlN
Templates
GaN Epitaxial
Wafers
GaAs
Epitaxial
Wafers
KNN
Film
BDD
Film
Optical Device Visible LEDs        
UV LEDs        
Laser Diodes        
High Speed & High Frequency Device Low Noise Transistors
(MESFET, HEMT, HBT)*3
         
Power Transistors
(MESFET, HEMT, HBT)*3
     
Microwave Monolithic Ics          
RF Switch          
Power Devices        
Piezoelectric Device Acceleration/Angular Rate Sensor          
Actuator          
Electrochemical Electrode Electrode          
Sensor          
  • *3MESFET: Metal-Semiconductor Field Effect Transistor
    HEMT: High Electron Mobility Transistor
    HBT: Heterojunction Bipolar Transistor
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