Development of semiconductor material for highly advanced communication devices

In the mobile communication market, the 3.5GHz band LTE-advanced (4G) protocol enabling maximum speed of 1Gbps was put into operation in 2016, and the 5G system enabling 10Gbps ー 100 times faster than today's LTE ー was rolled out in 2020. The abovementioned market shift requires the higher performance compound semiconductor devices operating on wide bands and high frequencies. Since GaAs devices show high performance in wide band applications with low energy consumption, it is ideally suited for mobile power amplifiers such as those used in smart phones and tablets. As the base station amplifier market progresses toward smaller size and higher efficiency, the share of GaN devices will increase. We will further strengthen the development activities on GaAs and GaN epitaxial wafers to supply continuously high quality products fullfiling the market needs and to advance the next generation communication market.

Development of "GaN on GaN" materials for next generation high efficiency power conversion devices

Recently GaN devices are expected to be used not only for high frequency device applications but also for high efficiency power devices. In the power conversion device market, research of GaN epitaxial layers on GaN free standing substrates (GaN on GaN) shows great potential to realize small size, high frequency switching devices and inverters. We has strong expertise in both GaN epitaxial growth technology and GaN substrate production technology. Utilizing this competitive advantage, we are diligently proceeding with further development of GaN on GaN technology. We will continue to be the top supplier for next generation GaN materials.

Development of environmentally friendly next generation materials

After successful development of high quality GaN crystal on sapphire substrate, the materials gained widespread adoption in general lighting applications. However, despite their high quality, the GaN on sapphire structure is still not suitable to produce high-end blue or violet laser diodes. To achieve these laser diodes, low dislocation (high quality) free-standing GaN substrates are necessary, because diodes must exhibit good reliability under high current density conditions. In the future, demand for free standing GaN substrates will increase substantially as the market for high efficiency lighting continues to grow. Actually, the replacement of light sources using mercury bulbs with GaN-substrate-based laser light ones is underway along with growing enviromental awareness. Such trends will further accelerate and unstop.

Currently, general piezoelectric films used for angular rate sensors and MEMS devices contain lead (Pb) which is a well-known environmentally hazardous substance. We is developing a new lead free piezoelectric film (KNN), which contain no hazardous materials.

Moreover, we are developing BDD(BDD:Boron Doped Diamond) applicable to electrolytic reduction of carbon dioxide, ozone water generation, or various sorts of electrochemical sensors.

Our mission is to continue developing and implementing the new sutainable solutions for our society.

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