Sumitomo Chemical and the Institute of Science Tokyo Collaborate to Create Next-Generation Eco-Friendly Device Technologies Using Strong Correlation Materials

Jun. 2, 2025

Announcing the Publication of Two Breakthrough Research Results Toward the Practical Implementation of Low-Power Memory

Sumitomo Chemical Co., Ltd. and the Institute of Science Tokyo, a national university corporation in Japan, established the Sumitomo Chemical Next-Generation Eco-Friendly Devices Collaborative Research Cluster in April 2023. Since then, both parties have been conducting research aimed at accelerating the practical implementation of strong correlation materials, which are expected to be one of the key materials for next-generation quantum devices. Recently, Sumitomo Chemical and the Institute of Science Tokyo have successfully achieved two breakthrough results that will contribute to further reducing power consumption of low-power memory devices. It is anticipated that these low-power memory devices will be one of the major applications of the strong correlation materials.

In recent years, energy consumption by memory and computational devices has increased alongside advancements in AI technology and data storage technology, leading to a growing demand for low-power and high-performance non-volatile memory. These research results will significantly contribute to the practical implementation of next-generation memory devices operating with ultra-low power consumption. Going forward, as a leading company in this field of technology, Sumitomo Chemical will strive to achieve more results building on these achievements, as well as pursue their early implementation in society.

Strong correlation materials are a group of materials that have a strong electron-electron interaction. They are expected to be utilized in next-generation memory devices that can operate with ultra-low power consumption, energy harvesting devices that efficiently convert ambient energy, such as light and heat, into electric energy, and environmentally friendly water purification systems. Sumitomo Chemical considers strong correlation materials an essential next-generation technology that can contribute to both saving and generating energy. Since April 2023, the Company has been working on collaborative research projects for these materials with the University of Tokyo, the Institute of Science Tokyo, and RIKEN, leveraging the cross appointment ^(*1) system.

(*1) An arrangement for industry-academia collaboration under which a researcher or expert is employed by two or more organizations or institutions, including universities, public research institutes, and companies, and engages in research and development and education activities according to his or her role in the organizations or institutions.

Sumitomo Chemical will continue to enhance its industry-academia collaborative research and development activities. The Company will also strive to establish technology platforms and implement across society innovative new technologies that can provide solutions to achieve a sustainable society.

Summaries of the research results

Research result 1: Successful control of the magnetic anisotropy of the ferromagnetic material CoFeB using the spontaneous polarization of the ferroelectric material AlScN
Research team:
The joint team of Associate Professor Kuniyuki Kakushima’s team and Sumitomo Chemical.

Details:
Magnetic random access memory (MRAM) ^(*2), which possesses non-volatility and operates at speed comparable to dynamic random access memory (DRAM) ^(*3), has garnered attention as a solution to meet the demand for low-power memory. However, for its practical implementation, reducing the power consumption of the spin-polarized current ^(*4) used to control MRAM is required.

The research team discovered a non-volatile change in magnetic anisotropy in a ferroelectric (AlScN) and ferromagnetic (CoFeB) layered structure induced by the direction of the internal electric field in the ferroelectric material. This result is expected to contribute to reducing the power consumption of current-driven write operations in MRAM, as well as improving write endurance of the memory.

(*2) Magnetic random access memory (MRAM): A non-volatile memory device that stores information as magnetization states.
(*3) Dynamic random access memory (DRAM): A volatile memory device that retains information by storing charges in a capacitor.
(*4) A current that has the same electron spin direction used for magnetization control in the magnetic tunnel junction (MTJ), which constitutes the recording element of MRAM.

  

Research result 2: Discovered a new path to magnetization reversal using an electric field in BiFe_0.9Co_0.1O₃
Research teams:
The joint team of Professor Masaki Azuma’s team, the Kanagawa Institute of Industrial Science and Technology (KISTEC), and Sumitomo Chemical.

Details:
The multiferroic material ^(*5) BiFe_0.9Co_0.1O₃, which exhibits both ferromagnetism and ferroelectricity at room temperature, is expected to be applied in next-generation magnetic memory devices that can operate with ultra-low power consumption. However, in device structures studied so far that utilize magnetization ^(*6) reversal induced by an electric field applied perpendicularly to thin films, there have been constraints on miniaturization, making it difficult to achieve the high integration and high performance required for practical implementation.

In this study, it was demonstrated through both experiments and theoretical calculations that by growing BiFe_0.9Co_0.1O₃ thin films in an unconventional orientation ^(*7), magnetization components perpendicular to an applied electric field can be reversed.

This discovery increases the flexibility in the arrangement of electrodes for polarization ^(*8) reversal and sensors for detecting magnetization reversal in the design of magnetic memory devices using BiFe_0.9Co_0.1O₃. It is expected to contribute to higher integration of magnetic memory devices and their higher performance, greatly advancing the development of next-generation magnetic memory.

(*5) A substance that possesses multiple ferroic properties, such as strong ferroelectricity, strong ferromagnetism, and strong ferroelasticity. It shows novel responses different from conventional materials, such as magnetization induced by an electric field (magnetoelectric effect).
(*6) The magnitude of magnetism derived from the internal degree of freedom, or spin, possessed by electrons.
(*7) Direction of crystals in thin films, which affects various properties of substances that form thin films.
(*8) The charge imbalance caused by the displacement of the centers of positive and negative ions within a substance.

Reference

Information about the papers:

Journal: Applied Physics Express (APEX)
Title: Magnetism control of thin CoFeB layers by ferroelectric polarization
Authors: Yan Wu, Kazushi Onimura, Hiroyuki Kobayashi, Satoshi Okamoto, Kuniyuki Kakushima
DOI：10.35848/1882-0786/adbf65

Journal: Advanced Materials
Title: Electric-field-driven reversal of ferromagnetism in (110)-oriented, single phase, multiferroic Co-substituted BiFeO₃ thin films
Authors: Takuma Itoh, Kei Shigematsu, Hena Das, Peter Meisenheimer, Kei Maeda, Koomok Lee, Mahir Manna, Surya Prakash Reddy, Sandhya Susarla, Paul Stevenson, Ramamoorthy Ramesh, Masaki Azuma
DOI：10.1002/adma.202419580

Related Information:
Sumitomo Chemical to Start Industry-Academia Collaborative Research of Strong Correlation Materials for the Creation of Next-Generation Quantum Devices Aiming for Early Practical Implementation, Also Utilizing "Cross Appointment"

 

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Corporate Communications Dept.
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