GaAs Epiwafer

GaAs-based MOVPE epitaxial layers for HEMT/HBT/BiHEMT structure of high frequency amplifier for wireless communication or laser diode structure of optical disk drive.

Inquiries about this product

Product Information

Generic name

Compound Semiconductor Epitaxial Wafer, GaAs (Gallium arsenide) Metalorganic Vapor Phase Epitaxy

CAS no.

1303-00-0

Application

  • S0000
  • T0000
  • T0400
  • U0000
  • U0100
  • U0200

Department

SCIOCS COMPANY LIMITED

Contact

ITOCHU PLASTICS INC. - JAPAN, Compound Semiconductor Sales Dept., Electronics Materials Division, Ichibancho Tokyu Building, 21 Ichibancho, Chiyoda-ku, Tokyo 102-0082, Japan
TEL: +81-3-6880-1664
FAX: +81-3-6880-1674
Website of SCIOCS COMPANY LIMITED