GaN-based MOVPE epitaxial layers for High Electron Mobility Transistor (HEMT) or power switching diode.

Inquiries about this product

Product Information

Generic name

Compound Semiconductor Epitaxial Wafer, GaN (Gallium nitride), Metalorganic Vapor Phase Epitaxy

CAS no.

25617-97-4、409-21-2

Application

• S0000
• T0000
• T0400
• U0000
• U0100
• U0200

Department

SCIOCS Division

Contact

2-7-1, Nihonbashi, Chuo-ku, Tokyo 103-6020, Japan
TEL: +81-3-5201-0323
FAX: +81-3-5201-0483
Website of SCIOCS Division