GaN Epiwafer

GaN-based MOVPE epitaxial layers for High Electron Mobility Transistor (HEMT) or power switching diode.

Inquiries about this product

Product Information

Generic name

Compound Semiconductor Epitaxial Wafer, GaN (Gallium nitride), Metalorganic Vapor Phase Epitaxy

CAS no.

25617-97-4、409-21-2

Application

  • S0000
  • T0000
  • T0400
  • U0000
  • U0100
  • U0200

Department

SCIOCS COMPANY LIMITED

Contact

ITOCHU PLASTICS INC. - JAPAN, Compound Semiconductor Sales Dept., Electronics Materials Division, Ichibancho Tokyu Building, 21 Ichibancho, Chiyoda-ku, Tokyo 102-0082, Japan
TEL: +81-3-6880-1664
FAX: +81-3-6880-1674
Website of SCIOCS COMPANY LIMITED